| PART |
Description |
Maker |
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| 10AM05 |
5.0 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| EVL31-050 EVL31-055 EVL32-055 |
(EVL3x) 600 Volts Class Power Transistor Modules
|
Fuji Semiconductors
|
| MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts
|
ON Semiconductor
|
| HER108G-AP HER103G HER107G HER101G |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
1.0 Amp Glass Passivated High Efficient Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| RGP20B RGP20G RGP20J RGP20K RGP20M RGP20A RGP20D |
2.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AE
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247
|
ON Semiconductor
|
| SFF10N100B |
10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SPD5614 SPD56142 SPD5622SM SPD5618 SPD5618SMS R000 |
1 AMP 200 Α 1000 VOLTS STANDARD RECOVERY RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
1 AMP 200 ? 1000 VOLTS STANDARD RECOVERY RECTIFIER
|
http://
Solid State Devices, Inc.
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| 1N4942GP11 1N4948GP-AP |
1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 ROHS COMPLIANT, PLASTIC PACKAGE-2
|
Micro Commercial Components, Corp.
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
